The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Jul. 27, 2021
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C01B 32/956 (2017.01); C30B 23/00 (2006.01); C30B 23/06 (2006.01); C30B 25/10 (2006.01); C30B 25/16 (2006.01); H10D 62/60 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C01B 32/956 (2017.08); C30B 23/002 (2013.01); C30B 23/066 (2013.01); C30B 25/10 (2013.01); C30B 25/165 (2013.01); H10D 62/60 (2025.01); H10D 62/8325 (2025.01); C01P 2002/52 (2013.01); C01P 2006/10 (2013.01); C01P 2006/40 (2013.01);
Abstract
A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 10Ω·cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.
Lin, Ching-Shan. (2026). Silicon carbide wafer and method of fabricating the same (U.S. Patent No. 12612713). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12612713
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile