The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
May. 26, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chien Hung Liu, Hsinchu County, TW;
Kuo-Ching Huang, Hsinchu, TW;
Harry-Hak-Lay Chuang, Zhubei, TW;
Wei-Cheng Wu, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to an integrated chip including a first dielectric layer overlying a substrate and a first conductive interconnect within the first dielectric layer. A bonding layer is over the first dielectric layer. The bonding layer includes a bonding dielectric layer and a bonding interconnect in the bonding dielectric layer. A first charged dielectric layer is along a bottom of the first dielectric layer. A second charged dielectric layer is along a top of the first dielectric layer. The first charged dielectric layer and the second charged dielectric layer have a same polarity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile