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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12610807 B1

PDFFull Text
Date of Patent:
Apr. 21, 2026

Filed:

Dec. 29, 2022

Integrated circuit devices including a back side power distribution network structure and methods of forming the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seungchan Yun, Waterford, NY (US);

Wonhyuk Hong, Clifton Park, NY (US);

Jaejik Baek, Watervliet, NY (US);

Eun Sung Kim, Clifton Park, NY (US);

Kang-Ill Seo, Springfield, VA (US);

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/01 (2025.01); H10D 84/856 (2025.01);
Abstract

Integrated circuit devices and methods of forming the same are provided. The integrated circuit devices may include a transistor including a channel region and a source/drain region contacting the channel region, a power rail that is configured be electrically connected to a power source and is spaced apart from the source/drain region in a first direction, and a power contact that is between the source/drain region and the power rail and contacts both the source/drain region and the power rail. The channel region may overlap the power contact in the first direction.

Find Patent Forward Citations

Yun, Seungchan. (2026). Integrated circuit devices including a back side power distribution network structure and methods of forming the same (U.S. Patent No. 12610807). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12610807

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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