The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Jul. 22, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei City, CN;

Inventor:

Kanyu Cao, Hefei City, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/42 (2006.01); H10P 14/68 (2026.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
H10P 76/2041 (2026.01); G03F 7/0002 (2013.01); G03F 7/42 (2013.01); G03F 7/70 (2013.01); H10P 14/68 (2026.01);
Abstract

The present disclosure relates to the technical field of semiconductors, and provides a method of processing a photoresist layer, and a photoresist layer. The method of processing a photoresist layer includes: forming a photoresist layer on a target layer, where the photoresist layer includes a first part close to the target layer and a second part away from the target layer; performing first exposure processing on the photoresist layer, and forming an exposure image in the first part of the photoresist layer; processing the second part of the photoresist layer by using a first process, such that the second part forms a third part, where a photosensitivity of the third part is higher than that of the first part; and stripping the third part.


Find Patent Forward Citations

Loading…