The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Jan. 18, 2023
Applicant:

The Board of Trustees of the University of Illinois, Urbana, IL (US);

Inventors:

Can Bayram, Champaign, IL (US);

Muhammad Ali Johar, Urbana, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); C30B 25/16 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H10H 20/01 (2025.01); H01S 5/026 (2006.01); H01S 5/343 (2006.01); H10H 20/817 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); C30B 25/16 (2013.01); C30B 25/183 (2013.01); C30B 29/406 (2013.01); H01L 21/0245 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02505 (2013.01); H01L 21/0254 (2013.01); H01L 21/02595 (2013.01); H01L 21/02609 (2013.01); H01L 21/0262 (2013.01); H01L 21/32134 (2013.01); H10H 20/01335 (2025.01); H01L 21/02381 (2013.01); H01S 5/026 (2013.01); H01S 5/34333 (2013.01); H01S 2304/04 (2013.01); H10H 20/817 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01);
Abstract

A wafer includes a buried substrate; a layer of silicon (100) disposed on the buried substrate and forming multiple U-shaped grooves, wherein each U-shaped groove comprises a bottom portion and silicon sidewalls (111) at an angle to the buried substrate; a buffer layer disposed within the multiple U-shaped grooves; and multiple gallium nitride (GaN)-based structures having vertical sidewalls disposed within and protruding above the multiple U-shaped grooves, the multiple GaN-based structures each including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111).


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