The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Oct. 06, 2022
Applicants:

Applied Materials, Inc., Santa Clara, CA (US);

Regents of the University of California, Oakland, CA (US);

Inventors:

Keith T. Wong, Mountain View, CA (US);

Srinivas D. Nemani, Saratoga, CA (US);

Ellie Y. Yieh, San Jose, CA (US);

Andrew C. Kummel, San Diego, CA (US);

Yunil Cho, San Diego, CA (US);

James Huang, San Diego, CA (US);

Assignees:

Applied Materials, Inc., Santa Clara, CA (US);

Regents of the University of California, Oakland, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/02068 (2013.01); H01L 21/02123 (2013.01); H01L 21/02304 (2013.01); H01L 21/02312 (2013.01); H01L 21/67017 (2013.01);
Abstract

A method includes forming a conductive material on a first dielectric layer, exposing the conductive material to aniline to produce a passivated surface of the conductive material, and after exposing the conductive material to aniline, forming a second dielectric layer on the first dielectric layer using a deposition process. The deposition process is a water-free and plasma-free deposition process, and the second dielectric layer does not form on the passivated surface of the conductive material.


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