The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Dec. 07, 2022
Applicant:

Nexperia B.v., Nijmegen, NL;

Inventors:

Stefano Dalcanale, Nijmegen, NL;

Adam Brown, Nijmegen, NL;

Jim Parkin, Nijmegen, NL;

Assignee:

Nexperia BV, Nijmegen, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 25/07 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/13 (2025.01); H10D 62/85 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 62/113 (2025.01); H01L 25/074 (2013.01); H10D 30/015 (2025.01); H10D 30/47 (2025.01); H10D 62/149 (2025.01); H10D 62/8503 (2025.01); H10D 64/254 (2025.01);
Abstract

A lateral power semiconductor device is provided. Some semiconductor devices show signs of failure caused by a short between metal layers, which have showed cracks in the insulator layer between the two metals which causes the short-circuit. Removing the superimposition between the borders of the metal layers reduces the risk of cracks in the insulator layer and thereby increases the reliability of the device. The lateral power semiconductor device of the present disclosure has one of these metal layers configured so that the metal has been removed at the area where it superimposes the area of the other metal layer so that these are isolated from each other not only by the insulation layer in between these metal layers, but also by the fact that they are isolated by a lateral spacing so that they do not lie on top of each other.


Find Patent Forward Citations

Dalcanale, Stefano. (2026). Lateral power semiconductor device (U.S. Patent No. 12610596). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12610596

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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