The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Nov. 17, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Sagar Premnath Karalkar, Essex Junction, VT (US);

Jie Zeng, Singapore, SG;

Souvick Mitra, Essex Junction, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 62/107 (2025.01); H10D 89/60 (2025.01);
Abstract

The disclosure provides a structure with a buried doped region, and methods to form the same. A structure may include a semiconductor substrate including a first well. A first terminal includes a first doped region in the first well. A second terminal includes a second doped region in the first well. The first well horizontally separates the first doped region from the second doped region. A first buried doped region is in the first well. The first buried doped region overlaps with, and is underneath, the first doped region. The first well vertically separates the first doped region from the first buried doped region.


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