The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Mar. 07, 2022
Applicant:

Sanken Electric Co., Ltd., Niiza, JP;

Inventors:

Hiroji Kawai, Oyama, JP;

Shuichi Yagi, Oyama, JP;

Hironobu Narui, Oyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 8/01 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 62/854 (2025.01);
U.S. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 8/051 (2025.01); H10D 8/053 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 62/854 (2025.01);
Abstract

This diode has an undoped GaN layer, an AlGaN layer (0<x<1)thereon, a Mg-doped p-type InGaN layer (0<y<1)having an island-like shape thereon, a metal electrodethereon, an anode electrodewhich is provided on the AlGaN layerand which is electrically connected to the metal electrodeand a cathode electrodewhich is provided on a part of the AlGaN layerwhich is located on the opposite side from the anode electrodewith respect to the p-type InGaN layer. In this diode, at a non-operating time, a two-dimensional electron gasis formed in the undoped GaN layerin the vicinity part of a hetero-interface between the AlGaN layerand the undoped GaN layerexcept a part below the p-type InGaN layer


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