The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Jan. 09, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Elia Ambrosi, Hsinchu City, TW;

Xinyu Bao, Fremont, CA (US);

Cheng-Hsien Wu, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/24 (2023.02); H10B 61/10 (2023.02);
Abstract

A memory device is provided. The memory device includes memory cells. Each of the memory cells includes: a resistance variable storage device; and a selector. The selector is stacked with the resistance variable storage device and coupled to the resistance variable storage device with a shared terminal, and includes a switching layer formed of a chalcogenide compound. A thickness of the switching layer is equal to or less than about 5 nm.


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