The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Jul. 01, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei City, CN;

Inventors:

Wei Chang, Hefei, CN;

Qingsong Du, Hefei, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/20 (2023.02); H10N 70/011 (2023.02);
Abstract

A semiconductor device includes: a semiconductor substrate and a memory cell located on a surface of the semiconductor substrate; the semiconductor substrate comprises a well area, an isolation structure, a first doped area and a second doped area; the isolation structure, the first doped area and the second doped area are located in the well area, and the isolation structure at least is located between the first doped area and the second doped area; the memory cell is located on a top surface of the second doped area and is electrically connected with the second doped area.


Find Patent Forward Citations

Chang, Wei. (2026). Semiconductor device and method for manufacturing same (U.S. Patent No. 12610556). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12610556

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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