The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
May. 09, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
National Taiwan Normal University, Taipei City, TW;
Kuan-Ting Chen, Taichung City, TW;
Chun-Yu Liao, Taipei City, TW;
Kuo-Yu Hsiang, Kaohsiung City, TW;
Yun-Fang Chung, Miaoli County, TW;
Min-Hung Lee, Taipei City, TW;
Shu-Tong Chang, Taoyuan City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
NATIONAL TAIWAN NORMAL UNIVERSITY, Taipei, TW;
Abstract
A method includes forming a semiconductor layer over a substrate; depositing a first ferroelectric layer over a channel region of the semiconductor layer; depositing a first dielectric layer over the first ferroelectric layer; depositing a second ferroelectric layer over the first dielectric layer; depositing a gate metal layer over the second ferroelectric layer; patterning the gate metal layer, the second ferroelectric layer, the first dielectric layer, and the first ferroelectric layer to form a gate structure; and forming source/drain regions in the semiconductor layer and on opposite sides of the gate structure.