The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Dec. 14, 2023
Applicant:
Nanya Technology Corporation, New Taipei City, TW;
Inventor:
Hsu Chiang, New Taipei City, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10W 20/00 (2026.01); H10W 20/45 (2026.01); H10W 20/47 (2026.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H10W 20/075 (2026.01); H10W 20/077 (2026.01); H10W 20/455 (2026.01); H10W 20/47 (2026.01); H10D 64/251 (2025.01); H10W 20/069 (2026.01);
Abstract
A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a base structure, a bit line structure and a spacer. The bit line structure is disposed over the base structure. The spacer is disposed around the bit line structure, and includes a first layer, a second layer and a third layer. The third layer is disposed over the second layer. A width of the third layer is substantially equal to a width of the second layer.