The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Feb. 01, 2023
Changxin Memory Technologies, Inc., Hefei City, CN;
Qinghua Han, Hefei City, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei City, CN;
Abstract
The present disclosure provides a semiconductor structure including: a channel on a semiconductor substrate for a first transistor; first bit lines are in contact with the first doped region arranged along the first direction; first word lines surround the channel region; the gate conductive layer and the second doped region, the channel layer arranged around the outer side of the gate conductive layer; the first semiconductor doped layer and the second semiconductor doped layer arranged on the outer side of the channel layer, so the channel layer and the gate conductive layer constitute the second transistor. The second bit line is in contact with either the first semiconductor doped layer or the second semiconductor doped layer; the second word line is in contact with the other one of the first semiconductor or the second semiconductor doped layer. The structure forms a new 2T0C DRAM structure.