The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Nov. 05, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Katherine Woo, Santa Clara, CA (US);
Jennifer Y. Sun, Fremont, CA (US);
Jian Li, Fremont, CA (US);
Wenhao Zhang, San Jose, CA (US);
Mayur Govind Kulkarni, Bangalore, IN;
Chidambara A. Ramalingam, Fremont, CA (US);
Ryan Sheil, Santa Cruz, CA (US);
Martin J. Seamons, San Jose, CA (US);
Nitin Deepak, Thane, IN;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Semiconductor fabrication component preparation methods are described. In embodiments, the methods include forming a first layer on a surface of the semiconductor fabrication component. The first layer is characterized by a porosity of greater than or about 0.01 vol. %. The methods further include depositing a second layer on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %. Treated semiconductor fabrication components are also described. In embodiments, the treated components include a first layer formed in the surface of the semiconductor fabrication component, where the first layer is characterized by a porosity of greater than or about 0.01 vol. %, and a second layer positioned on the first layer, where the second layer is characterized by a porosity of less than or about 20 vol. %.