The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Aug. 01, 2023
Applicant:

Ap Memory Technology Corporation, Hsinchu County, TW;

Inventors:

Wen-Liang Chen, Hsinchu County, TW;

Yen-Jun Li, Hsinchu, TW;

Assignee:

AP MEMORY TECHNOLOGY CORPORATION, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/33 (2006.01); H01G 4/252 (2006.01); H01G 4/30 (2006.01); H01G 4/38 (2006.01);
U.S. Cl.
CPC ...
H01G 4/252 (2013.01); H01G 4/306 (2013.01); H01G 4/33 (2013.01); H01G 4/385 (2013.01);
Abstract

A capacitor device is provided. The capacitor device includes a capacitor structure, a conductive line, an interlayer dielectric (ILD) and a first via conductor. The capacitor structure includes a lower electrode and an upper electrode. The conductive line is leveled with the lower electrode and electrically isolated from the lower electrode. The ILD is disposed over the capacitor structure and the conductive line. The first via conductor is adjacent to the capacitor structure and electrically coupled to the conductive line. A method for manufacturing a capacitor die is also provided.


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