The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Jan. 17, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Yue Sheng, Wuhan, CN;

Shu Xie, Wuhan, CN;

Weijun Wan, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/419 (2006.01); G11C 7/10 (2006.01); G11C 29/42 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 7/1039 (2013.01); G11C 29/42 (2013.01);
Abstract

A memory device, a memory system, and a method for data calculation with the memory device are provided. The memory device includes an array of memory cells and a peripheral circuit coupled to the memory cells is provided. The peripheral circuit includes a static random-access memory (SRAM) configured to obtain first data transmitted from a data interface of the memory device, page buffers configured to sense second data from the array of memory cells, and at least one process unit coupled to the SRAM and the page buffers via a data-path bus of the peripheral circuit. At least one process unit is configured to perform calculation based on the first data and the second data. The peripheral circuit further includes a control logic configured to program the second data into the array of memory cells.


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