The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Dec. 29, 2023
Micron Technology, Inc., Boise, ID (US);
Rajesh H. Kariya, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for power management and delivery for high bandwidth memory are described. A high bandwidth memory (HBM) device may include a power management integrated circuit (PMIC) and a voltage regulator integrated within an interface die of the HBM system or included as a separate chip within the HBM system stack. Accordingly, the HBM system may be supplied a higher voltage and may regulate the voltage to a desired power level, which may increase the total power available to the HBM system without increasing the quantity of microbumps. Additionally, a ground voltage, a positive voltage, or both, may be supplied to the HBM device via a back interface of the HBM device, which may reduce the quantity of microbumps at a front interface. In some examples, a modified heatsink assembly may supply the ground voltage, the positive voltage, or both, to the HBM system.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile