The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Jun. 29, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Wei-Lin Chu, Hsinchu County, TW;

Hsin-Lun Tseng, Taoyuan City, TW;

Sheng-Wen Huang, Hsinchu, TW;

Chih-Chung Huang, Hsinchu City, TW;

Chi-Ming Tsai, Taipei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); G03F 1/22 (2012.01); G03F 1/36 (2012.01); G03F 1/70 (2012.01); G03F 7/20 (2006.01); G06N 20/00 (2019.01);
U.S. Cl.
CPC ...
G03F 1/70 (2013.01); G03F 1/22 (2013.01); G03F 1/36 (2013.01); G03F 7/2004 (2013.01); G06F 30/392 (2020.01); G06N 20/00 (2019.01);
Abstract

A method includes: providing a first design layout including a plurality of cells; updating a first cell of the plurality of cells using optical proximity correction to provide a first updated cell and a data set; and updating a second cell from remaining cells in the first design layout based on the data set and a model without involvement of optical proximity correction to provide a second updated cell, wherein the model includes hidden layers including nodes and is trained to obtaining converged values of the nodes of the hidden layers through providing a mapping of edge segments before lithography enhancement and edge segments after lithography enhancement using optical proximity correction, and wherein at least one of the providing, and updating is executed by one or more processors.


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