The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

May. 09, 2022
Applicants:

National Center for Advanced Packaging Co., Ltd., Wuxi, CN;

Shanghai Xianfang Semiconductor Co., Ltd., Shanghai, CN;

Inventors:

Quanlong Wang, Wuxi, CN;

Peng Sun, Wuxi, CN;

Liqiang Cao, Wuxi, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/40 (2026.01); H10W 20/41 (2026.01); H10W 70/685 (2026.01); H10W 90/00 (2026.01); H10W 74/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/496 (2026.01); H10W 20/427 (2026.01); H10W 70/685 (2026.01); H10W 90/00 (2026.01); H10W 90/701 (2026.01); H10W 74/00 (2026.01); H10W 90/732 (2026.01); H10W 90/734 (2026.01); H10W 90/792 (2026.01); H10W 90/794 (2026.01);
Abstract

Provided in the present application are a chip packaging structure and a preparation method therefor. The chip packaging structure comprises a substrate, a chip, an insulating layer, a capacitor structure and a packaging layer. According to the chip packaging structure and the packaging method therefor provided in the present application, a capacitor structure is packaged on a surface and a lateral wall of a chip, such that the capacitor structure is applied in packaging, thereby improving the level of integration of the chip. In the present application, a first electrode layer, a second electrode layer and a capacitive dielectric layer all extend along a surface on a side of a chip facing away from a substrate and along a lateral wall of the chip. Therefore, a larger relative area of the first electrode layer and the second electrode layer can be obtained, which can improve the capacity of a capacitor.


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