Semiconductor devices

Abstract

A semiconductor device may include a gate structure, first and second source/drain layers, first and second contact plugs, first and second conductive structures, and a third contact plug. The gate structure may be on a substrate. The first and second source/drain layers may be at upper portions, respectively, of the substrate on opposite sidewalls of the gate structure and adjacent thereto. The first and second contact plugs may be on the first and second source/drain layers, respectively, and each contact plugs may extend in a vertical direction. The first and second conductive structures may contact upper surfaces of the first and second contact plugs, respectively. The third contact plug may contact an upper surface of the second conductive structure. A height and a width of the second conductive structure may be greater than a height and a width of the first conductive structure.