The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Nov. 07, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Dong Woo Paeng, Albany, CA (US);

Yunsang Kim, Monte Sereno, CA (US);

He Zhang, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 50/24 (2026.01); B23K 26/073 (2006.01); B23K 26/362 (2014.01); H01J 37/32 (2006.01); H05B 3/00 (2006.01); H10P 34/42 (2026.01); H10P 74/00 (2026.01); B23K 101/40 (2006.01); G02B 26/10 (2006.01); G02B 27/09 (2006.01);
U.S. Cl.
CPC ...
H10P 74/238 (2026.01); B23K 26/0732 (2013.01); B23K 26/362 (2013.01); H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H05B 3/0047 (2013.01); H10P 34/42 (2026.01); H10P 50/242 (2026.01); B23K 2101/40 (2018.08); G02B 26/101 (2013.01); G02B 27/0927 (2013.01); G02B 27/0944 (2013.01); G02B 27/0955 (2013.01); H01J 2237/334 (2013.01);
Abstract

A substrate processing system includes a processing chamber, a substrate support, a heat source, a gas delivery system and a controller. The substrate support is disposed in the processing chamber and supports a substrate. The heat source heats the substrate. The gas delivery system supplies a process gas to the processing chamber. The controller controls the gas delivery system and the heat source to iteratively perform an isotropic atomic layer etch process including: during an iteration of the isotropic atomic layer etch process, performing pretreatment, atomistic adsorption, and pulsed thermal annealing; during the atomistic adsorption, exposing a surface of the substrate to the process gas including a halogen species that is selectively adsorbed onto an exposed material of the substrate to form a modified material; and during the pulsed thermal annealing, pulsing the heat source multiple times within a predetermined period to expose and remove the modified material.


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