The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Nov. 09, 2023
Tokyo Electron Limited, Tokyo, JP;
Kate Abel, Austin, TX (US);
Dipak Aryal, Austin, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Embodiments of improved process flows and methods are provided to pattern a semiconductor substrate using direct self-assembly (DSA) of metalate salt ionic liquid crystals (ILCs) having metalate anions. After self-assembly of the metalate salt ILCs into ordered structures, an oxidation process is used to remove the organic components of the ordered structures and convert the metalate anions into metal oxide patterns. In addition to providing a robust metal oxide pattern, which can be transferred to the underlying substrate, the process flows and methods disclosed herein enable ILCs to be used as pitch multipliers in advanced patterning techniques.