The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Nov. 09, 2021
Applicant:

X-fab Global Services Gmbh, Erfurt, DE;

Inventors:

Xuezhou Cao, Plymouth, GB;

Shyh Yau Tein, Kota Samarahan, MY;

Michaelina Ong, Kuching, MY;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H10D 30/01 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/80377 (2025.01); H10D 30/0221 (2025.01); H10F 39/18 (2025.01);
Abstract

In one aspect, a transistor includes a diffusion region having a drain, a source, and a channel between said drain and source. The transistor further includes an isolation region around said diffusion region for electrically isolating said transistor. In addition, the transistor includes a gate poly overlapping at least a part of said channel, wherein said diffusion region extends laterally beyond said gate poly in a channel width direction.


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