The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
May. 31, 2023
Fuji Electric Co., Ltd., Kawasaki, JP;
Keishirou Kumada, Matsumoto-city, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device includes a main semiconductor region and a current detecting region. The main semiconductor region and the current detecting region have a semiconductor substrate of a first conductivity type, a first semiconductor layer of a first conductivity type, first semiconductor regions of a second conductivity type, second semiconductor regions of the first conductivity type, trenches, first high-concentration regions of the second conductivity type, and second high-concentration regions of the second conductivity type. An active region through which a current flows when the current detecting region is in an on-state has a first cell region that operates as a transistor and second cell regions that are provided, respectively, in four corners of the first cell region and operate only as diodes and not as a transistor.