The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Feb. 14, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Tzu-Ging Lin, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 21/3065 (2006.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H01L 21/3065 (2013.01); H01L 21/76224 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/115 (2025.01); H10D 64/017 (2025.01);
Abstract

A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming first and second nanostructured layers on first and second fin bases, forming cladding layers on sidewalls of the first and second nanostructured layers, forming a polysilicon structure on the first and second nanostructured layers, removing a portion of the polysilicon structure to form a first opening on the second nanostructured layers, removing a portion of the second nanostructured layers through the first opening to form a second opening on the second fin base, removing a portion of the second fin base through the second opening to form a third opening on the substrate, removing a portion of the substrate through the third opening to form a fourth opening in the substrate, and depositing an insulation material to fill the first, second, third, and fourth openings.


Find Patent Forward Citations

Lin, Tzu-Ging. (2026). Profile control of isolation structures in semiconductor devices (U.S. Patent No. 12604503). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12604503

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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