The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Jul. 01, 2025
Xidian University, Xi'an, CN;
Xidian University, Xi'an, CN;
Abstract
A nanochannel GaN-based device includes: a substrate layer, a nucleation layer, a buffer layer, a channel region, an insertion layer, a barrier layer, a cap layer, a first highly n-doped material layer, a second n-doped material layer, a source electrode, a drain electrode, and a gate electrode. A first arrayed pattern edge is formed on a side of the first n-doped material layer facing towards the drain electrode. A second arrayed pattern edge is formed on a side of the second n-doped material layer facing towards the source electrode. A part of the channel region, the insertion layer, the barrier layer and the cap layer form an arrayed nanochannel structure between a source electrode and a drain electrode. The first arrayed pattern edge is interdigitated with an end of the arrayed nanochannel structure. The second arrayed pattern edge is interdigitated with another end of the arrayed nanochannel structure.