The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Nov. 01, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Jau-Yi Wu, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some embodiments relate to a memory device. The memory device includes a phase change element (PCE) overlying a substrate. A bottom electrode via is disposed over the substrate. A top electrode overlies the bottom electrode via. The PCE is disposed between the bottom electrode via and the top electrode. The PCE comprises a chalcogenide material. The chalcogenide material comprises a first atomic percentage of a first element, a second atomic percentage of a chalcogen element, and a third atomic percentage of a first dopant. The third atomic percentage is less than the first atomic percentage and is less than the second atomic percentage.