The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Jul. 03, 2024
Micron Technology, Inc., Boise, ID (US);
Milena Tsvetkova Ivanov, Munich, DE;
Stefanie Christina Granato, Munich, DE;
Jun Tan, Weißenfeld, DE;
Varsha Mohan, Munich, DE;
Manfred Hans Plan, Munich, DE;
Martin Brox, Munich, DE;
Morshed Mohammed, Freising, DE;
Yu Ting Wu, Taichung, TW;
Juan Antonio Garrido Ocon, Munich, DE;
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices implementing self-timing read termination are described. A memory system may perform a read operation in which the memory system generates a first signal and a second signal to couple a first sense component and a second sense component with a global access line, respectively. The first sense component may be coupled with one or more memory cells via an access line, and the second sense component may be configured to determine one or more logic values of the one or more memory cells based on the coupling with the global access line. The memory system may support a self-timed termination of the first signal to decouple the first sense component from the global access line. The memory system may generate a third signal to terminate the first signal based on determining the one or more logic values.