The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Nov. 28, 2023
Micron Technology, Inc., Boise, ID (US);
Angelo Visconti, Appiano Gentile, IT;
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for switch and hold biasing for memory cell imprint recovery are described. A memory device may be configured to perform an imprint recovery procedure that includes applying one or more recovery pulses to memory cells, where each recovery pulse is associated with a voltage polarity and includes a first portion with a first voltage magnitude and a second portion with a second voltage magnitude that is lower than the first voltage magnitude. In some examples, the first voltage magnitude may correspond to a voltage that imposes a saturation polarization on a memory cell (e.g., on a ferroelectric capacitor, a polarization corresponding to the associated voltage polarity) and the second voltage magnitude may correspond to a voltage magnitude that is high enough to maintain the saturation polarization (e.g., to prevent a reduction of polarization) of the memory cell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile