The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Jun. 24, 2020
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Timothy William Weidman, Sunnyvale, CA (US);

Chenghao Wu, Berkeley, CA (US);

Katie Lynn Nardi, San Jose, CA (US);

Boris Volosskiy, San Jose, CA (US);

Kevin Li Gu, Mountain View, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/16 (2006.01); G03F 7/004 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/168 (2013.01); G03F 7/0043 (2013.01); G03F 7/2004 (2013.01);
Abstract

Various embodiments herein relate to methods, apparatus, and systems for baking metal-containing on a semiconductor substrate in the presence of a reactive gas species. For example, the method may include receiving the substrate in a process chamber, the substrate having a photoresist layer thereon, where the photoresist layer includes a metal-containing photoresist material; flowing a reactive gas species from a gas source, through a gas delivery line, into the process chamber, and exposing the substrate to the reactive gas species in the process chamber; and baking the photoresist layer while the substrate is exposed to the reactive gas species.


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