The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Nov. 15, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Judson Holt, Ballston Lake, NY (US);

Bartlomiej Jan Pawlak, Leuven, BE;

Vibhor Jain, Essex Junction, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01);
Abstract

Structures for an ion-sensitive field-effect transistor and methods of forming same. The structure comprises a semiconductor substrate, a microfluidic channel above the semiconductor substrate, a semiconductor layer including a portion positioned as a sensing layer in the microfluidic channel, a first electrical connection coupled to the portion of the semiconductor layer, and a second electrical connection coupled to the semiconductor substrate. The portion of the semiconductor layer is spaced above the semiconductor substrate.


Find Patent Forward Citations

Holt, Judson. (2026). Ion-sensitive field-effect transistors with local-field bias (U.S. Patent No. 12601710). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12601710

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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