The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Jun. 29, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

David John Jorgensen, Mountain View, CA (US);

Jian Wu, San Jose, CA (US);

Vladimir Nagorny, Tracy, CA (US);

Hugo Rivera, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 1/56 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); C23C 16/455 (2006.01); G01F 1/688 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01); H05H 1/24 (2006.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
G01F 1/56 (2013.01); B81B 7/0058 (2013.01); B81B 7/0061 (2013.01); B81C 1/00301 (2013.01); B81C 1/00309 (2013.01); C23C 16/45504 (2013.01); C23C 16/45544 (2013.01); C23C 16/45557 (2013.01); C23C 16/45561 (2013.01); G01F 1/688 (2013.01); H05H 1/2418 (2021.05); H10W 20/087 (2026.01); B81B 2201/0292 (2013.01); B81B 2203/04 (2013.01); B81B 2207/093 (2013.01); B81C 2203/019 (2013.01); B81C 2203/035 (2013.01); B81C 2203/036 (2013.01); B81C 2203/054 (2013.01); H01J 37/3244 (2013.01); H01J 2237/24585 (2013.01);
Abstract

A method of manufacturing a dielectric barrier discharge (DBD) structure includes forming a patterned electrode layer around an outer perimeter of a substrate composed of a dielectric material. The patterned electrode layer includes multiple electrodes around the outer perimeter of the substrate and gaps between adjacent electrodes. The method further includes depositing a dielectric layer over at least a first region of the patterned electrode layer to form a DBD region of the DBD structure.


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