The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Sep. 06, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyunjun Ahn, Suwon-si, KR;

Byounghoon Ji, Suwon-si, KR;

Kyoungwoo Hong, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
C23C 16/45527 (2013.01); H01J 37/32449 (2013.01); H01L 21/0228 (2013.01); H01J 37/321 (2013.01); H01J 2237/332 (2013.01); H10B 43/27 (2023.02);
Abstract

A method of depositing an atomic layer is provided. The method includes a plurality of deposition cycles. Each of the plurality of deposition cycles includes rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber into which a substrate is loaded, rotating the valve plate by a second angle while supplying a purge gas to the chamber, rotating the valve plate by a third angle while supplying a reactor to the chamber, and rotating the valve plate by the second angle while supplying the purge gas to the chamber, and wherein the first angle, the second angle, and the third angle are certain angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port, and the first angle differs from the third angle.


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