Microelectronic devices, and related memory devices, electronic systems, and methods

Abstract

A microelectronic device includes a stack structure comprising a vertically alternating sequence of conductive material and insulative material arranged in tiers, the stack structure divided into blocks by filled slot structures, each of the blocks comprising: a memory array region; staircase structures having steps; and crest regions interposed in a first horizontal direction between horizontally neighboring pairs of the staircase structures, and contact structures within the first crest region of each of the blocks and vertically extending through the stack structure to a source tier underlying the stack structure, the contact structures comprising: first contact structures in electrical communication with control logic circuitry; and second contact structures electrically isolated from the control logic circuitry, at least some the first contact structures relatively more centrally positioned with each of the blocks in a second horizontal direction orthogonal to the first horizontal direction than at least some of the second contact structures.