The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Sep. 06, 2021
Applicant:

Nissan Chemical Corporation, Tokyo, JP;

Inventors:

Tomoya Ohashi, Toyama, JP;

Suguru Sassa, Toyama, JP;

Noriaki Fujitani, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 74/20 (2026.01); H10P 74/00 (2026.01); H10P 90/00 (2026.01);
U.S. Cl.
CPC ...
H10P 74/20 (2026.01); H10P 74/23 (2026.01); H10P 90/00 (2026.01);
Abstract

A method for detecting impurities on a surface of a silicon wafer for manufacturing semiconductors, the impurities not being able to be detected by a conventional inspection method, a method for manufacturing the silicon wafer for manufacturing semiconductors having the impurities removed from the surface thereof, and a method for screening wafers for manufacturing semiconductors. This method for detecting impurities on a surface of a wafer for manufacturing semiconductors includes: a step for coating the surface of the wafer with a film-forming composition, and performing baking to form a film; and then a step for detecting impurities by means of a wafer inspection tool.


Find Patent Forward Citations

Loading…