The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Oct. 19, 2022
Quanzhou Sanan Semiconductor Technology Co., Ltd., Nanan, CN;
QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD., Nanan City, CN;
Abstract
A light-emitting diode includes a semiconductor epitaxial structure that has a first current spreading layer, a first transition layer, a first cladding layer, a second transition layer, a first confinement layer, an active layer, a second confinement layer, a second cladding layer, and a second current spreading layer. The first current spreading layer, the first cladding layer, and the first confinement layer independently have semiconductor materials that are different in an aluminum content. An aluminum content of the first transition layer increases in a direction from the first current spreading layer to the first cladding layer. An aluminum content of the second transition layer decreases in a direction from the first cladding layer to the first confinement layer.