The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
May. 15, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Che Chung, Hsinchu City, TW;
Wei Min Chan, New Taipei City, TW;
Yen-Huei Chen, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first transistor cell. The first transistor cell generates a first current signal and a second current signal indicating a bit of a physical unclonable function. The first transistor cell includes a first transistor, a second transistor and a third transistor. The first transistor outputs the first current signal. The second transistor generates the first current signal from a first source/drain structure of the second transistor, and generates the second current signal from a second source/drain structure of the second transistor. The third transistor outputs the second current signal. The first transistor, the second transistor and the third transistor are stacked in order along a first direction. The first source/drain structure of the second transistor and the second source/drain structure of the second transistor are arranged along a second direction different from the first direction.