The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
May. 06, 2021
Adeia Semiconductor Solutions Llc, San Jose, CA (US);
Josephine B. Chang, Bedford Hills, NY (US);
Bruce B. Doris, Slingerlands, NY (US);
Michael A. Guillorn, Cold Springs, NY (US);
Isaac Lauer, Yorktown Heights, NY (US);
Xin Miao, Guilderland, NY (US);
Adeia Semiconductor Solutions LLC, San Jose, CA (US);
Abstract
Field effect transistors include a stack of nanowires of vertically arranged channel layers. A source and drain region is disposed at respective ends of the vertically arranged channel layers. A gate stack is formed over, around, and between the vertically arranged channel layers. Internal spacers are each formed between the gate stack and a respective source or drain region, with at least one pair of spacers being positioned above an uppermost channel layer.