The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Jan. 09, 2023
Applicant:
Changxin Memory Technologies, Inc., Hefei City, CN;
Inventors:
Juanjuan Huang, Hefei City, CN;
Weiping Bai, Hefei City, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/03 (2023.02); H10B 12/033 (2023.02); H10D 1/042 (2025.01); H10D 1/716 (2025.01);
Abstract
The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base and a capacitor structure. The base is provided with a capacitive contact structure. The capacitor structure is connected to the capacitive contact structure, and the capacitor structure includes a plurality of capacitor units stacked in a direction vertical to the capacitive contact structure.