The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Feb. 23, 2024
Applicant:
Etron Technology, Inc., Hsinchu, TW;
Inventors:
Chun Shiah, Hsinchu, TW;
Tzung-Shen Chen, Hsinchu, TW;
Assignee:
Etron Technology, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/419 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); H10B 10/12 (2023.02);
Abstract
A memory device is provided. The memory device includes: a latch circuit, having a first inverter and a second inverter cross-coupled with each other, wherein a first pull up transistor and a first pull down transistor of the first inverter are coupled through a first selection transistor, and a second pull up transistor and a second pull down transistor of the second inverter are coupled through a second selection transistor; a first access transistor, coupled to a first storage node of the latch circuit; and a second access transistor, coupled to a second storage node of the latch circuit.