The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Feb. 28, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyoung Lim Suk, Suwon-si, KR;

Taewon Yoo, Seoul, KR;

Seokhyun Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/50 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49816 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 25/105 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/16238 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1094 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01);
Abstract

A semiconductor package is provided. The semiconductor package includes a first substrate including a first, second and third under-bump patterns; a semiconductor chip provided on the first substrate; conductive structures provided on the first substrate; and a second substrate provided on the semiconductor chip and the conductive structures. The third under-bump pattern is electrically isolated from the first and second under-bump patterns. The conductive structures include: a first conductive structure coupled to the first under-bump pattern; a second conductive structure coupled to the second under-bump pattern; and a third conductive structure coupled to the third under-bump pattern and provided adjacent to the first and second conductive structures. The third conductive structure is provided between the first conductive structure and the second conductive structure, the first under-bump pattern is wider than the third under-bump pattern, and the second under-bump pattern is wider than the third under-bump pattern.


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