The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Sep. 20, 2022
United Microelectronics Corp., Hsin-Chu City, TW;
Tzu-Feng Weng, Tainan City, TW;
Chao-Sheng Cheng, Taichung City, TW;
Chi-Cheng Huang, Kaohsiung City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A manufacturing method of a gate structure includes the following steps. A semiconductor substrate is provided. An isolation structure is formed in the semiconductor substrate and surrounds an active region in the semiconductor substrate. A gate pattern is formed on the active region and the isolation structure. The gate pattern includes a first gate structure and a first capping layer disposed on the first gate structure. A part of the first capping layer located above an interface between the active region and the isolation structure is removed for exposing a part of the first gate structure located above the interface between the active region and the isolation structure. A removing process is performed for reducing a thickness of the part of the first gate structure located above the interface between the active region and the isolation structure.