The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Sep. 27, 2023
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Hayato Iga, Tokyo, JP;

Kazuya Hirata, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 72/00 (2026.01); B23K 26/53 (2014.01); B24B 7/22 (2006.01); B24B 9/06 (2006.01); H10B 80/00 (2023.01); H10P 10/00 (2026.01); H10P 34/42 (2026.01); H10P 52/00 (2026.01); H10P 54/00 (2026.01); H10P 74/00 (2026.01); H10P 74/20 (2026.01); H10W 72/00 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10P 72/0428 (2026.01); B23K 26/53 (2015.10); B24B 7/228 (2013.01); B24B 9/065 (2013.01); H10B 80/00 (2023.02); H10P 10/12 (2026.01); H10P 10/128 (2026.01); H10P 34/42 (2026.01); H10P 52/00 (2026.01); H10P 54/00 (2026.01); H10P 72/0452 (2026.01); H10P 72/0604 (2026.01); H10P 72/0616 (2026.01); H10P 74/203 (2026.01); H10P 74/23 (2026.01); H10W 72/0198 (2026.01); H10W 90/00 (2026.01); H10W 72/073 (2026.01); H10W 90/732 (2026.01);
Abstract

A method of processing a wafer includes forming a bonded wafer assembly by bonding one of opposite surfaces of a first wafer to a second wafer, the first wafer having a device region and an outer circumferential excessive region, applying a laser beam to the first wafer while positioning a focused spot of the laser beam radially inwardly from the outer circumferential edge of the first wafer, on an inclined plane that is progressively closer to the one of the opposite surfaces of the first wafer toward the outer circumferential edge, thereby forming a separation layer shaped as a side surface of a truncated cone, grinding the first wafer from the other one of the opposite surfaces thereof to thin down the first wafer to a predetermined thickness, and detecting whether or not the outer circumferential excessive region has been removed from the first wafer.


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