The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Jun. 18, 2021
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventor:

Hiroshi Hashigami, Annaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C30B 25/04 (2006.01); C30B 29/16 (2006.01); H10D 8/60 (2025.01);
U.S. Cl.
CPC ...
H01L 21/0242 (2013.01); C23C 16/40 (2013.01); C30B 25/04 (2013.01); C30B 29/16 (2013.01); H01L 21/02483 (2013.01); H01L 21/02505 (2013.01); H01L 21/0251 (2013.01); H01L 21/02565 (2013.01); H10D 8/60 (2025.01);
Abstract

A semiconductor laminate at least including: a base; a buffer layer; and a crystalline metal oxide semiconductor film containing at least one metal element and having a corundum structure, the semiconductor laminate having the buffer layer on a main surface of the base directly or via another layer, the semiconductor laminate having the crystalline metal oxide semiconductor film on the buffer layer. The buffer layer is a laminate structure of a plurality of buffer films each with a different composition, and at least two buffer films of the plurality of buffer films have a film thickness of 200 nm or more and 650 nm or less.


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