The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Jan. 25, 2021
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventor:

Zhi-Biao Zhou, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/20 (2006.01); H01L 23/34 (2006.01); H01L 23/367 (2006.01); H01L 23/552 (2006.01); H03H 3/02 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01); H03H 9/56 (2006.01); H10D 30/47 (2025.01); H10D 30/60 (2025.01); H10D 62/83 (2025.01); H10D 62/85 (2025.01); H10D 84/08 (2025.01); H10N 39/00 (2023.01);
U.S. Cl.
CPC ...
H10N 39/00 (2023.02); H01L 23/34 (2013.01); H01L 23/367 (2013.01); H01L 23/552 (2013.01); H03H 3/02 (2013.01); H03H 9/173 (2013.01); H03H 9/545 (2013.01); H03H 9/564 (2013.01); H10D 30/475 (2025.01); H10D 30/60 (2025.01); H10D 62/83 (2025.01); H10D 62/8503 (2025.01); H10D 84/08 (2025.01); H03H 2003/021 (2013.01);
Abstract

A structure of a semiconductor device is provided, including a circuit substrate. A first metal bulk layer is disposed on the circuit substrate. A buffer layer is disposed on the first metal bulk layer. An absorbing layer is disposed on the buffer layer. A first electrode layer is disposed on the absorbing layer. A plurality of piezoelectric material units are disposed on the first electrode layer. A protection layer is conformally disposed on the piezoelectric material units. A second metal bulk layer is disposed over the piezoelectric material units, and including a first part and a second part. The first part penetrating through the protection layer is disposed on the piezoelectric material units, serving as a second electrode layer. The second part is at a same level of the first part, and at least electrically connecting to the first electrode layer.


Find Patent Forward Citations

Zhou, Zhi-Biao. (2026). Structure of semiconductor device and method for fabricating the same (U.S. Patent No. 12593612). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12593612

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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