The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Feb. 22, 2023
Fuji Electric Co., Ltd., Kawasaki, JP;
Motoyoshi Kubouchi, Matsumoto-city, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device including: a semiconductor substrate having bulk donors distributed throughout the semiconductor substrate; a high-concentration hydrogen peak provided on the semiconductor substrate and having a hydrogen dose amount of 3×10/cmor more; a high-concentration region including a position overlapping with the high-concentration hydrogen peak in a depth direction of the semiconductor substrate and having a donor concentration higher than a bulk donor concentration; and a lifetime adjustment portion provided at a position overlapping with the high-concentration hydrogen peak in the depth direction and having a carrier lifetime indicating a minimum value.