The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Apr. 24, 2023
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Hung Hsun Shuai, Tainan City, TW;

Chih-Jung Chen, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/40 (2023.01); H01L 23/60 (2006.01); H10B 41/30 (2023.01);
U.S. Cl.
CPC ...
H10B 41/40 (2023.02); H01L 23/60 (2013.01); H10B 41/30 (2023.02);
Abstract

A semiconductor device includes a substrate, a doped ring, a plurality of contacts, and a plurality of conductive lines. The substrate includes a first region and a second region surrounding the first region. The doped ring is located in the substrate in the second region and surrounds the first region. The doped ring includes a first doped region and a plurality of second doped regions. The first doped region is located in the substrate in the second region and surrounds the first region. The first doped region has an opening. The second doped regions are separated from each other and located in the substrate of the opening. The contacts are electrically connected to the second doped regions. The conductive lines are connected to the contacts and a plurality of conductive layers in the first region.


Find Patent Forward Citations

Loading…