The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

May. 31, 2021
Applicant:

Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Wuhan, CN;

Inventors:

Jun Zhou, Wuhan, CN;

Peng Sun, Wuhan, CN;

Daohong Yang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/77 (2023.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H04N 25/77 (2023.01); H10F 39/8037 (2025.01); H10F 39/18 (2025.01);
Abstract

An active pixel circuit, an image sensor and an electronic device are disclosed. The active pixel circuit has a photodiode and at least three MOS transistors. At least one of the MOS transistors serves as a transfer transistor, and at least another one of the MOS transistors serves as a reset transistor. Moreover, at least yet another one of the MOS transistors serves as other transistor(s). The transfer transistor has a higher threshold voltage and smaller off-state leakage current under operating voltage than each other MOS transistor. With this design, the high-threshold, low-leakage characteristics of the transfer transistor reduce storage distortion of the photodiode and signal readout distortion, resulting in less read noise and lower power consumption of the active pixel circuit. Meanwhile, the low-threshold, high-leakage (i.e., high-on-current) characteristics of the other MOS transistors impart an increased reading speed of the active pixel circuit.


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