The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Jan. 10, 2024
Micron Technology, Inc., Boise, ID (US);
Haibo Li, Cupertino, CA (US);
Xiangyu Tang, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory device of a first array of memory cells configured as quad-level cell (QLC) memory or penta-level cell (PLC) memory and including one or more first planes. A second array of memory cells configured as second memory that is less-densely programmed than the first array, the second array including one or more second planes. Control logic receives a first command to program a first set of memory cells of the first array with a first logical state and a second command to program a second set of memory cells of the second array with a second logical state corresponding in threshold voltage range to the first logical state. The first and second sets of memory cells are associated with a shared wordline. The control logic causes the first and second sets of memory cells to be concurrently programmed with a threshold voltage distribution corresponding to the first logical state.